Investigating the filaments in HfO2 resistive RAMs through ab initio calculations

Orateur : Kan-Hao XUE (Laboratoire de Réactivité et Chimie des Solides - Amiens, France)

HfO2 has been one of the leading candidate materials for resistive random access memory (RRAM). Nevertheless, still little is known regarding the structure of conductive filaments in these devices, though for Pt\TiO2\Pt RRAM it has been convincingly identified that some Magnéli phases such as Ti4O7 constitute the filaments. In this talk an overview will be given on how a conductive tetragonal Hf2O3 phase was surprisingly obtained and thus predicted for experimental verification from our ab initio calculations. Moreover, a more detailed electroforming mechanism is proposed, involving a discussion on the lower limit of forming voltage in Pt\HfO2\Pt cells. Finally, recent ab initio simulation results on HfO2 grain boundaries will be discussed.

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