X-ray diffraction study of dislocation distributions in heteroepitaxial films
Mardi 3 décembre 2013 15:30
- Duree : 1 heure
Lieu : Room 018, Central Building, ESRF - 6 Rue Jules Horowitz - Grenoble
Orateur : Viktor KOPP (Paul-Drude Institut, Berlin, Germany)
Epitaxial growth of a film with lattice parameters different from the ones of the substrate gives rise to relaxation of stain by creation of dislocations. Misfit and threading dislocations are present in relaxed epitaxial films. High-resolution x-ray diffractometry allows studying various dislocation distributions. The general theory of kinematical x-ray diffraction from relaxed heteroepitaxial films will be presented. Approximate analytical calculations and direct Monte Carlo simulations of x-ray diffraction signal will be considered. An overview of known results and the features of x-ray intensity distributions will be given. Recent examples of the X-ray analysis of the reciprocal space maps due to misfit dislocations in SiGe/Si epitaxial films and threading dislocations in GaN films will be presented.
Contact : claudine.romero@esrf.fr
Discipline évènement : (Physique)
Entité organisatrice : (ESRF)
Nature évènement : (Séminaire)
Evènement répétitif : (Séminaire ESRF)
Site de l'évènement : Polygone scientifique
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