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II-VI and III-V semiconductor integration and their applications in solar cells and other optoelectronic devices

Vendredi 16 mai 2014 11:00 - Duree : 1 heure
Lieu : CEA, Bâtiment C5, Salle 421A - 17 rue des martyrs - 38000 Grenoble

Orateur : Yong-Hang ZHANG (Director, Center for Photonics Innovation, Fulton Entrepreneurial Professor, School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287)

Semiconductor optoelectronic materials and devices have experienced very rapid development for more than half a century. However, there still remains a lack of closely lattice-matched materials and substrates suitable for the grand integration of various kinds of semiconductor optoelectronic and electronic devices on a single chip. I have recently proposed a new material platform : the 6.1 Å II-VI (MgZnCdHg)(SeTe) and III-V (AlGaIn)(PAsSb) semiconductor materials lattice-matched to GaSb and InAs substrates. These materials have direct bandgaps covering a very broad energy spectrum from far IR ( 0 eV) to UV ( 3.4 eV). This feature is not achievable by any other known lattice-matched semiconductors on any commercially available substrates. Such a unique material platform enables new light emitting devices, multi-junction solar cells, multi-color photodetectors and FPAs, high electron mobility transistors (HEMTs), resonant tunneling diodes, and facilitates monolithic integration of various materials without misfit dislocations to ensure the best quality for device applications. This talk will focus on the latest progress of the MBE growth of the materials and their applications to photodetectors, solar cells, and lasers.

Brief Bio : Professor Zhang received his BS and MS in China and did his research at the Max Planck Institute for Solid States and received this doctoral degree in physics from the University of Stuttgart in 1991. He then worked as an Assistant Research Engineer at UCSB before he joined Hughes Research Labs in 1993. In 1996, he was appointed Associate Professor in the Department of Electrical Engineering at ASU and was then promoted to full professor in 2000. He is the founding director of the Center for Photonics Innovation at ASU and a fellow of OSA. His areas of research interest include MBE growth, optical properties of semiconductor heterostructures, optoelectronic devices, and their applications. More information about his group can be found on the webpage : http://asumbe.eas.asu.edu/.

Contact : carmelo.castagna@cea.fr

Discipline évènement : (Physique)
Entité organisatrice : (INAC/SP2M)
Nature évènement : (Séminaire)
Evènement répétitif : (Séminaire SP2M)
Site de l'évènement : Site CEA avec accès badge

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