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Mobility Spectrum Analysis of Carrier Transport at Insulator/Semiconductor Interfaces

Jeudi 5 juin 2014 13:00 - Duree : 1 heure
Lieu : Salle Belledonne - IMEP/LAHC - Minatec

Orateur : Lorenzo FARAONE (IEEE-EDS Distinguished Lecturer, The University of Western Australia)

Modern semiconductor MIS and hetero-structures can contain multiple populations of distinct carrier species which can be either i ntentional or unintentional. Accurate characterisation of electronic transport properties in such structures demands a more sophisticated methodology than the conventional analysis of Hall-effect measurements at a single value of magnetic field intensity. This difficulty can be overcome by undertaking variable magnetic field Hall measure-ments combined with mobility spectrum analysis (MSA), as originally proposed by Beck and Anderson in 1988. Over the last two decades, numerous research groups have developed sophisti-cated algorithms built upon the original MSA framework, among which can be found the comer-cially-available quantitative mobility spectrum analysis (QMSA), various implementations of maximum-entropy MSA, and the recently developed high-resolution MSA procedure (HR-MSA). In this presentation, results will be presented of MSA based studies of electronic transport in various HEMT and MIS structures, including recent progress in the modelling of mobility distributions and carrier scattering in two-dimensional electron gases in AlGaN/GaN HEMTs. It is shown that the HR-MSA approach can provide unique information that enables optimisation of the epitaxial growth process, since it allows identification of parasitic conduction channels. Furthermore, since HR-MSA is able to provide information on mobility distributions for each individual carrier, it is capable of providing greater insight into the fundamental scattering mechanism and electronic transport phenomena in two-dimensional inversion and accumulation layers. The presentation will also include some preliminary HR-MSA results on carrier transport in SiC and InGaAs MOSFET devices. http://imep-lahc.grenoble-inp.fr/events/special-seminar-thursday-june-5-2014-610044.kjsp?RH=IMEP_FR

Contact : bauza@minatec.grenoble_inp.fr

Discipline évènement : (Physique)
Entité organisatrice : (IMEP/LAHC)
Nature évènement : (Séminaire)
Evènement répétitif : (Séminaire IMEP-LAHC)
Site de l'évènement : Site Minatec

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