Few electrons and holes regimes in silicon quantum dots
Mardi 25 novembre 2014 15:00
- Duree : 1 heure
Lieu : Salle "Remy Lemaire" K 223 (1er étage) bât. K de l’institut Néel/CNRS
Orateur : Julien RENARD (INAC)
Silicon is a very promising platform for quantum spintronics. In particular, the possibility of isotopic purification allows to get material free of nuclear spins which are known to be the limiting factor in III-V based spin Qubits. Coherence times T2 exceeding 1ms have been demonstrated for an electron spin in purified silicon [1]. I will present our efforts in trying to build Qubits in a 300mm CMOS silicon platform. I will show that both electrons and holes can be localized into nanotransistors that effectively behave as quantum dots at low temperature [2]. Magnetic field dependent electronic transport experiments reveal that the gyromagnetic factor of holes is both anisotropic and strongly gate voltage dependent. This should give the possibility of fast spin manipulation by an electric field using g tensor modulation.
[1]M. Veldhorst et al Nature Nanotechnology (2014)
[2]B. Voisin et al NanoLetters (2014)
Contact : stephanie.monfront@fondation-nanosciences.fr
Discipline évènement : (Physique)
Entité organisatrice : (Fondation Nanosciences)
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Entité organisatrice : (LANEF)
Nature évènement : (Séminaire)
Evènement répétitif : (Séminaire Nanoélectronique Quantique)
Site de l'évènement : Polygone scientifique
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