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Introductory Course on Magnetic Random Access Memories (InMRAM 2015)

Mercredi 1er juillet 2015 08:00 - Duree : 3 jours8 heures
Lieu : Maison MINATEC and PHELMA - MINATEC Campus, 3 Parvis Louis Néel, 38054 Grenoble Cedex 9 – France

Orateur : Plusieurs intervenants

With this second announcement, we let you know that Registration to InMRAM is now open till 31 May 2015.

Registration at http://dr11.azur-colloque.cnrs.fr/pre-inscription.php?colloque=161&lang=en

and more details at http://www.inmram.com/

This introductory course aims at helping students, researchers and engineers having little or no background in magnetism to better understand the physics and working principles of this new class of magnetic memories called MRAMs (Magnetic Random Access Memories) based on magnetic tunnel junctions. These MRAM and particularly the STT-MRAM (Spin-Transfer-Torque RAM) memories are attracting an increasing interest in microelectronics industry. In a report published by the ITRS (International Roadmap on Semiconductors) in 2010, they have been identified with Resistive RAM as one of the two most promising technologies of emerging non-volatile memories allowing scalability to and beyond the 16nm technology node. The courses will be organized during two and a half days. They will cover various aspects of MRAM technology : the basic spintronics phenomena involved in MRAM, the materials, the various categories of MRAM (pros/cons, performances, degree of maturity), comparison with other technologies of non-volatile memories in terms of working principle, performances, foreseen applications (Phase Change RAM and Resistive RAM), the fabrication process, and the perspectives of low-power electronic circuits based on this hybrid CMOS/magnetic technology. This will be the third edition of InMRAM. This year, each attendee will have the choice between two introductory tutorials (1st July morning) : one on magnetism and one on microelectronics for those attendees having respectively no background in microelectronics or in magnetism. A poster session will be organized the first evening to allow PhD students and post-docs to present their work. The afternoon of the 3rd day (July 3rd), each attendee will have the opportunity to either visit SPINTEC or attend a training on tools for the design of hybrid CMOS/magnetic circuits. The course language will be English.

More information : http://www.inmram.com/

Contact : bernard.dieny@cea.fr

Discipline évènement : (Physique)
Entité organisatrice : (CNRS Grenoble ) -
Entité organisatrice : (Fondation Nanosciences) -
Entité organisatrice : (INAC) -
Entité organisatrice : (INAC/SPINTEC) -
Entité organisatrice : (LANEF) -
Entité organisatrice : (Université Grenoble Alpes)
Nature évènement : (Ecole/cours)
Site de l'évènement : Site Minatec

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