Short overview of electrical and optical measurements of solar cells in Tallinn University of Technology

Orateur : Erkki KASK (Dpt. of Material Science, Tallinn Univ. of Technology, Estonia )

The increase of energy prices, increasing energy consumption and a lack of fossil fuels reminds the need of alternativ e energy sources. This has also resulted in the increase of studies in the field of solar energy. The research in our lab at Tallinn University of Technology is mainly directed to the development of several new technologies of preparing chalcopyrite solar cell semiconductor materials included in thin film and monograin layer solar cells. Used absorber materials are multinary compounds such as Cu2ZnSnS4 (CZTS), Cu2ZnSnSe4 (CZTSe) and their solid solutions Cu2ZnSn(S,Se)4 (CZTSSe) and other. To produce more efficient solar cells, the characterisation of the defect levels in the prepared solar cells is needed. This can be done by capacitive measurements methods, like C-F, C-V and admittance spectroscopy. Admittance spectroscopy is effective and non-destructive method for studying the defects in solar cells. Without understanding the basic physical properties of absorber materials it will be impossible to make a breakthrough and show higher efficiencies. It is known that intrinsic point defects in absorber are playing a major role and determine the properties of it. This is why more defect studies are needed. The presentation will also cover different electrical and optical measurements possibilities of solar cells at Tallinn University of Technology, i.e photoluminescence, admittance spectroscopy, C-F, C-V measurements etc.

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