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Periodically arranged GaN nanocolumns for the application to visible nanocolumn emitters

Lundi 2 novembre 2015 11:00 - Duree : 1 heure
Lieu : CEA, Bâtiment C5, Salle 421A - 17 rue des martyrs - 38000 Grenoble

Orateur : Katsumi KISHINO (Sophia University)

Katsumi Kishino earned his Bachelor’s, Master’s, and Doctorate degrees in Engineering from the Tokyo Institute of Technology, Tokyo, Japan, in 1975, 1977, and 1980, respectively. From 1980 to 1984, he was a Research Associate at Tokyo Institute of Technology. In 1984, he joined the Department of Electrical and Electronics Engineering, Sophia University, Tokyo, as a Lecturer. Then, he was appointed as an Associate Professor in 1986 and a Professor in 1992. Recently, he is conducting research on nitride semiconductors by rf-assisted molecular beam epitaxy, mainly including GaN-based nanocolumn, InGaN-based nanocolumn emitters and InN-related materials. From Sept. 1989 to Aug. 1990, he made the pioneering research of resonant-cavity-enhanced (RCE) photodetectors as a Visiting Associate Professor at the University of Illinois at Urbana-Champaign, on leave from Sophia University. He served as one of the Photonics Society Distinguished Lecturers for 2011-12. Dr. Kishino is a fellow of the Japan Society of Applied Physics and the Institute of Electronics, Information and Communication Engineers (IEICE) of Japan, and a senior member of IEEE.

Abstract :

The selective area growth (SAG) of GaN nanocolumns with the diameter less than 100 nm was carried out on GaN/sapphire templates through a careful initial nucleation process of nanocolumns at the mask opening. We got the success of the fabrication of orderly arrayed fine nanocolumns down to the diameter of 25 nm. The growth of highly uniform arrays of GaN nanocolumns with diameters from 122 to 430 nm on Si (111) substrates was demonstrated, where the employment of GaN film templates with flat surfaces obtained using an AlN/GaN superlattice (SL) buffer on Si, contributed to the high-quality SAG of nanocolumns. Although the GaN template included a large number of dislocations (dislocation density 1011 cm-2), the dislocation filtering effect of nanocolumns was enhanced with decreasing nanocolumn diameters. Ti-mak SAG was also carried out on Si substrates employing a thin sputter-deposited AlN nucleation layer, resulting in fabrication of orderly arrayed InGaN/GaN nanocolumn arrays with the photoluminescence emission wavelengths of 455 to 690 nm. Then, we successfully demonstrated a transcription of the grown nanocolumn arrays to another functional supportive conductive CuW carrier, by flip-chip bonding assembly for a high efficiency device. The periodic arrangement of nanocolumns added the photonic crystal effect. Light-diffraction at photonic band edges of Γ points produce the directional radiation beams from nanocolumn LEDs.

Contact : carmelo.castagna@cea.fr

Discipline évènement : (Physique)
Entité organisatrice : (INAC/SP2M)
Nature évènement : (Séminaire)
Evènement répétitif : (Séminaire SP2M)
Site de l'évènement : Site CEA avec accès badge

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