Main challenges in microelectronics and future need in characterisation : the vision from LFoundry
Mardi 24 janvier 2017 16:00
- Duree : 1 heure
Lieu : Room 1-45, LOB Lab and Office Building, ESRF, 71 avenue des Martyrs, 38000 Grenoble
Orateur : Onofrio Antonino CACIOPPO (R&D- Physical & FA Lab Senior Manager at LFoundry), Sergio D’ALBERTO (General Affairs Manager at LFoundry) & Marco ROSSI (Professor of Physics at the Faculty of Engineering at La Sapienza University)
The nano characteristics of materials used in CMOS electronics industry plays an important role for designing the devices performances and guaranteeing the expected functionality ; among these silicon strain is one key feature since it modulates either the mobility performances and junction leakages. To characterize the Si strain on nano scaled design test structures and measure the expected strain values obtained in the production process, nano-Raman and electron diffraction techniques have been used. Similarly the I-V characterization of single transistors or junctions in the live die has been explored with nano-probing technique.
Contact : isabelle.combe@esrf.fr
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