ATTENTION !!! CHANGEMENT D’HORAIRE !!! Atomic Layer Deposition (ALD) of Ga-containing sulfide materials for applications in photovoltaics

Orateur : Nathanaelle SCHNEIDER (CNRS-IRDEP (Institut de Recherche et Développement sur l’Energie Photovoltaïque), UMR7174 - EDF/CNRS/Chimie ParisTech, 78401 Chatou) Institut du Photovoltaïque d’Ile de France (IPVF), 92160 Antony

Atomic layer deposition (ALD) is a well-adapted technique to control thin film properties and interfaces, which is fundamental in photovoltaics. Our group has developed the ALD of various sulfide and oxysulfide materials such as In2S3, CuxS, CuInS2, Zn(O,S) or In2(O,S)3 and has applied them in CIGS solar cells. More recently, we developed the synthesis of gallium-containing sulfide materials (GaxS, CuxGayS). For each growth processes, the influence of precursors, the involved surface chemistry and the film properties are systematically explored, using ex-situ characterization techniques such as SEM, XRD, EDS, Hall effect measurements, UV–vis spectroscopy, or XPS fine profiling studies. Added to those, numerical methods (DFT) have been used to determine some growth characteristics of GaxS, explore structures and energies of key intermediates, transition states, side-reactions, rearrangement on the surface.

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