ATTENTION !!! CHANGEMENT D’HORAIRE !!! n and p-type doping of GaN nanowires : from growth to electrical properties

Orateur : Soutenance de Thèse de Zhihua FANG

III-nitride nanostructures have been attracting increasing attention due to their peculiar properties and potential device applications as lighting LEDs. The control and evaluation of the doping in the nanostructures is a crucial, yet challenging issue. This thesis advances the field by exploring the n and p type doping process of GaN nanowires (NWs) grown by molecular beam epitaxy (MBE). In particular, their electrical properties have been revealed through a multi-technique approach at the single NW level. This original study provides a nanoscale description of the electrical and doping properties of the GaN NWs, facilitating the fabrication of the future GaN nanostructures based devices.

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