Introductory Course on Magnetic Random Access Memories (InMRAM)

Orateur : Plusieurs intervenants

This introductory course aims at helping students, researchers and engineers having little or no background in magnetism to better understand the physics and working principles of this new class of magnetic memories called MRAMs (Magnetic Random Access Memories) based on magnetic tunnel junctions. These MRAM or STTRAM (Spin-Transfer-Torque RAM) memories are attracting an increasing interest in microelectronics industry. In a recent ITRS (International Roadmap on Semiconductors) report, they have been identified with Redox RAM as one of the two most promising technologies of emerging non-volatile memories allowing scalability to and beyond the 16nm technology node. The courses will be organized during two and a half days. They will cover various aspects of MRAM technology : the basic spintronics phenomena involved in MRAM, the materials, the various categories of MRAM (pros/cons, performances, degree of maturity), the fabrication process, and the perspectives of low power electronic circuits based on this hybrid CMOS/magnetic technology. The courses will be completed by an optional half day of presentation of design tools for the design of hybrid CMOS/MRAM circuits and of lab visit. The conference language will be English.

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