The physics beneath the resistive switching effect in metal/complex oxide interfaces

Orateur : Alejandro SCHULMAN (LMGP PhD student) Co-directed by M. Boudard (LMGP) & C. Acha (Laboratorio de Bajas Temperaturas - Dept. de Fisica - Universidad de Buenos Aires - Argentina)

The main research topic of my thesis is the study of the physic mechanism of the resistive switching effect (RS) in metal/complex oxides interfaces for future applications in solid state memory devices (mainly RRAM). The RS is based on the non-volatile change of the resistance of the interfaces upon the application of an electric field. These devices are marked as one of the most promising candidates for the replacement of the current flash technology. In this talk I’ll give an overlook of the state of the art physics mechanism for the RS effect along with our results in compounds : CuO, TiO2, YBa2Cu3O7- and La0.66Sr0.33MnO3 among others. Most of the effects here presented will be discussed by considering the physics derived from an electric field-induced oxygen ion migration, which controls the electric transport properties of these metal/complex oxide interfaces. I’ll also talk about some new approaches to improve the performance of these memory devices.

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