High Sensitivity Magnetoresistive Sensors : stack optimization, micro and nanofabrication process

Orateur : Ricardo FERREIRA (INL in Portugal)

Magnetoresistive sensors based in magnetic tunnel junction stacks optimized for several different applications are discussed. Alternatives for the linearization of the transfer curve are presented. The linearization of stacks including a weakly pinned sensing layer exchange biased in the orthogonal direction is discussed in detail. It will be shown that this type of stacks is appropriate to manufacture sensors in a very wide range of geometries : from 100x100mm2 areas were the demagnetizing fields are negligible down to nano-sensors in the 100nm range. Some applications exploring these types of sensors and their requirements will be presented. The micro and nanofabrication used to produce the devices and the main challenges concerning the reproducibility of the transport properties will be addressed.

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