Nitrogen-doped TiO2 by atomic layer deposition for energy applications
Mardi 8 avril 2014 14:00
- Duree : 1 heure
Lieu : Salle des Séminaires du LMGP (M2-20), 2ème étage, Bât Phelma MINATEC - 3 parvis Louis Néel - 38000 Grenoble
Orateur : Dr. Liang TIAN (LMGP)
Nitrogen-doped TiO2 is well-known for improving photocatalysis properties of undoped TiO2.
However, in this project project carried out at SiMaP (Saint Martin d’Hères, France), , we are looking at fabricating three-dimensional transparent TiO2 based p-n junctions for solar cell and light emitting diode applications. This raises two challenges : conformal coating of the high-aspect ratio template and efficient p-type doping of the TiO2 thin layers. Such a doping is achieved with Nitrogen-doped TiO2. We are showing that the conductivity type is a function of the thickness which relates to a given morphology and phases present in the TiO2 thin layers. A minimum resistivity of 20 Ω cm is eventually obtained.
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Contact : colette.lartigue@minatec.inpg.fr
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