Resistive memories embedded in advanced logic CMOS technologies

Orateur : Elisa VIANELLO (CEA- LETI)

The application potential of the new emerging resistive memories - as metal oxide resistive switching memory (OxRAM) or conductive-bridge memory (CBRAM) - cove rs the standalone memory technologies (as NAND and DRAM), but offers also potential for exciting new applications and markets, as new functionality coupled with logic circuits to enable block power-down, or use as synapses in neuromorphic circuits. In this presentation, we briefly present different ReRAM technologies, OxRAM, CBRAM developed in the Memory Component Laboratory in Leti. Moreover we will focus on the role that the different resistive memory technologies can play in new emerging fields of applications. Concerning the introduction of non-volatile functionality at the logic level, we will demonstrate hybrid (CMOS logic + ReRAM devices, specifically CBRAM and OXRAM) circuits for Ultra Low Power (ULP) FPGA and fixed-logic IC design (as Non Volatile Flip-Flops). Concerning neuromorphic circuits, we will focus on the emulation of synaptic plasticity effects with resistive memories synapses (specifically, OxRAM or CBRAM). We will show the implementation of large-scale energy efficient neuromorphic systems with stochastic-binary synapses.

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