Few-electron transport in physically-defined silicon quantum dots
Mardi 25 août 2015 15:00
- Duree : 1 heure
Lieu : Salle « Remy Lemaire » (K223) Bâtiment K - Institut Néel – 25, rue des martyrs - 38000 Grenoble
Orateur : Shunri ODA (Tokyo Institute of Technology)
Increasing attention has been paid to Si based quantum information processing devices because of potentially long coherence time due to small number of nuclear spins and compatibility with Si integrated device process technology. Previous works of Si QIP devices adopted electric confinement methods to form a silicon quantum dot. A unique feature of our approach is we prepare physically-defined quantum dots. The advantages of this method are possibilities of small dot size and small distance between dots and high density integration because the number of electrodes can be reduced.
We have demonstrated Pauli spin blockade in coupled quantum dots, detection of a few electron and a few hole regime by using charge sensor single electron transistors. These achievements are important steps for the realization of Si based qubits.
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Contact : Denis Basko
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