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A Comparative Study on the Effects of Annealing on the Characteristics of Zinc Oxide Thin-Film Transistors with Gate-Stacks of Different Gas-Permeability

Mercredi 13 janvier 2016 15:00 - Duree : 1 heure 15 minutes
Lieu : Room A342 (2nd floor), MINATEC - CIME Nanotech - Grenoble

Orateur : Man WONG

The effects of different thermal processing on the characteristics of zinc oxide (ZnO) thin-film transistors (TFTs) with either gas-permeable or sealed gate-stack were studied and compared. The characteristics of a TFT heat-treated in a non-oxidizing ambience or under a sealed configuration degraded with increasing annealing temper ature, though the former offered a comparatively wider process margin. On the other hand, the oxidization of the channel region of a TFT allowed by a gas-permeable gate-stack resulted in significant improvement in the transistor characteristics – e.g. eliminating the hysteresis and increasing the field-effect mobility to a relatively high value of 55 cm2/Vs. The difference in behavior is attributed to the annealing-dependent generation and annihilation of defects in ZnO under different coverage configurations, and suggests a general guideline on the thermal processing of ZnO TFTs.

Man Wong (S ’83 – M ’88 – SM ’00) was born in Beijing, China. From 1979 to 1984, he studied at the Massachusetts Institute of Technology, USA, where he obtained his BS and MS degrees in Electrical Engineering. From 1985 to 1988, he was at the Center for Integrated Systems at Stanford University, USA, where he worked on tungsten-gate MOS technology and obtained his PhD degree, also in Electrical Engineering. From 1988 to 1992, he was with the Semiconductor Process and Design Center of Texas Instruments, USA and worked on the modeling and development of integrated-circuit metallization systems and dry/vapor surface-conditioning processes. He is currently with the Department of Electronic and Computer Engineering at the Hong Kong University of Science and Technology, Hong Kong. His research interests include micro-fabrication technology, device structure and material ; physics and technology of thin-film transistor ; organic light-emitting diode display technology ; modeling and implementation of integrated micro-systems ; and thin-film solar cell device and process technology. He is a member of Tau Beta Pi, Eta Kappa Nu and Sigma Xi. He was appointed an Honorary Guest Professor of Nankai University, Tianjin, China, in 2003 ; a Visiting Professor of Soochow University, Suzhou, China, in 2011 ; a Distinguished Visiting Professor of the State Key Laboratory of Transducers Technology at the Institute of Microsystems and Information Technology of the Chinese Academy of Sciences, Shanghai, China, in 2015 ; and a Visiting Professor of Xiangtang University, Xiangtang, China, in 2015.

Contact : Libor.Rufer@imag.fr

Discipline évènement : (Physique)
Entité organisatrice : (TIMA)
Nature évènement : (Séminaire)
Site de l'évènement : Site Minatec

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