Investigation of the spin-to-charge current conversion in 3D (by Inverse spin Hall Effect) and 2D (by Inverse Edelstein Effect) systems
Jeudi 10 mars 2016 11:00
- Duree : 1 heure
Lieu : SPINTEC, CEA Grenoble, 17 rue des martyrs
Orateur : J.C. ROJAS SANCHEZ (Institut Jean Lamour, UMR CNRS 7198 - Université de Lorraine, F-54506 Vandoeuvre Les Nancy, France)
Most spintronics devices are today based on the manipulation of spin currents that do not carry electrical charges but can be described as equal flows of electrons with opposite spin in opposite directions. The main operations in spintronics are the creation of spin currents from charge currents (electrical currents) and the detection of spin currents by transforming them into charge currents, in other words, conversion between charge and spin currents. We have used experiments of spin pumping by ferromagnetic resonance (SP-FMR) to investigate the efficiency of the spin-to-charge current conversion (SCCC) by spin-orbit effects in different systems [1-6]. In this seminar, I will first remind how to probe the SCCC in SP-FMR experiment. Then I will discuss our contributions to the SCCC in 3D and 2D systems. These results were achieved during my post-doc at CEA-Grenoble and UMPhi CNRS/Thales.
1) SCCC in 3D systems : In 3D systems the SCCC can be obtained by the Inverse Spin Hall Effect (ISHE) and is then characterized by the dimensionless spin Hall angle, θSHE [1-3]. I will discuss particularly the cases of i) Pt in Co/Pt and Co/Cu/Pt system taking into account the spin memory loss at the interfaces [1-2]. ii) Increasing and tuning the θSHE in Au1-xWx alloys [3]. iii) I will show an example of the SHE exploitation to manipulate the magnetization [6].
2) SCCC in 2D systems : SCCC can also be obtained by the spin-orbit coupling of 2D surface or interface states and inversion symmetry breaking as in our recent experimental discovery of the Inverse Edelstein Effect (IEE). With 2D systems, the key parameter that accounts for the efficiency of the SCCC is a length, which is called lIEE. I will discuss the cases of : i) IEE in metallic Rashba interfaces [4], ii) IEE in LAO/STO oxide Rashba interfaces and iii) IEE in topological insulator thin film [5].
[1] Spin pumping and inverse spin Hall Effect in platinum : The essential role of spin-memory loss at metallic interfaces, PRL 112, 106602 (2014).
[2] Spin pumping and inverse spin Hall effect in Platinum and other 5d metals : The essential role of spin-memory loss and spin-current discontinuities at interfaces, SPIE 9167, Spintronics VII, 916729 (2014).
[3] Experimental evidences of a large extrinsic spin Hall Effect in AuW alloy, APL 104, 142403 (2014).
[4] Spin-to-charge conversion using Rashba coupling at the interface between non-magnetic materials, Nat. Commun. 4, 2944 (2013).
[5] Spin to charge conversion at room temperature by spin pumping into a new type of topological insulator : α-Sn films, PRL accepted (2016).
[6] Perpendicular magnetization reversal in Pt/[Co/Ni]3/Al multilayers via the Spin Hall Effect of Pt, APL accepted (2016).
Contact : olivier.boulle@cea.fr
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