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Introductory Course on Magnetic Random Access Memory (InMRAM 2017)

lundi 3 juillet 2017 - Duree : 3 jours
Lieu : Maison MINATEC and PHELMA - MINATEC Campus - 3 Parvis Louis Néel - 38054 Grenoble Cedex 9 – France

Orateur : Plusieurs intervenants

REGISTRATION ARE NOW OPENED TILL 3rd JUNE 2017 (see www.InMRAM.com for details)

1st step : Pre-REGISTRATION at https://www.azur-colloque.fr/DR11/inscription/preinscription/124

This introductory course aims at helping students, researchers and engineers to better understand the physics and working principles of this new class of magnetic memories called MRAM (Magnetic Random Access Memory) based on magnetic tunnel junctions. These MRAM and particularly the STT-MRAM (Spin-Transfer-Torque RAM) are attracting an increasing interest in microelectronics industry. In 2016, numerous announcements from major microelectronics companies have been published about the forthcoming volume production of MRAM based products.

The course will cover various aspects of MRAM technology : the basic spintronics phenomena involved in MRAM, the materials constituting the magnetic tunnel junctions, the various categories of MRAM (pros/cons, performances, degree of maturity), a comparison with other technologies of non-volatile memories in terms of working principle, performances, foreseen applications (Phase Change RAM and Resistive RAM), their fabrication process, and the perspectives of low-power electronic circuits based on this hybrid CMOS/magnetic technology.

The course is accessible to attendees having little or no background in magnetism. It lasts 2 and a half day plus an optional half day. The language is English. This will be the fourth edition of InMRAM. The three first editions were quite successful with an average of 80 attendees from all over the world and coming from both academic laboratories and companies. At the beginning of the course, each attendee can choose between two introductory tutorials (3rd July morning) : one on magnetism (for attendees having no or little background in magnetism) and one on microelectronics (for those having little background in microelectronics). Compared to previous editions, tutorials on Spin-orbit-torque MRAM and Race Track memories are added to the program. On the afternoon of the 3rd day (optional, July 5th), each attendee has the possibility to either visit SPINTEC or attend a training on tools for the design of hybrid CMOS/magnetic circuits.

More details can be found on the InMRAM website : www.InMRAM.com

Contact : contact@inmram.com

Discipline évènement : (Physique)
Entité organisatrice : (INAC/SPINTEC)
Nature évènement : (Conférence / débat) -
Nature évènement : (Ecole/cours)
Site de l'évènement : Site Minatec

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