Low-frequency noise phenomena in advanced nano-scale electronic devices

Orateur : Christoforos THEODOROU (IMEP-LAHC)

The transistor gate oxide surface miniaturization towards the nanometer scale, the use of new semiconductor or insulator materials, as well as the co mplex manufacturing process steps, can dramatically increase the device low-frequency noise (LFN) levels. Added to that, individual trapping phenomena can cause the manifestation of high-amplitude random telegraph noise (RTN). On the bright side, LFN and RTN can be used as powerful non-destructive tools for interface quality characterization and trap localization, as well as for sensing purposes.

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