A CMOS silicon hole spin qubit
Jeudi 2 mars 2017 09:30
- Duree : 1 heure
Lieu : Salle « Remy Lemaire » (K223) de l’Institut Néel – au n°25 de la rue des martyrs, Grenoble.
Orateur : Romain Maurand (INAC)
We report recent progress towards solid-state qubits based on fully-depleted silicon-on-insulator (FDSOI) technology. We discuss an approach where qubits, the elementary bits of quantum information, are encoded in the spin degree of freedom of gate-defined quantum dots in silicon nanowire devices. We present experimental results on electric-field-mediated qubit manipulation induced by microwave pulses applied to the confining gates. In the case of hole-spin qubits, we demonstrate full two-axis qubit control with Rabi frequencies exceeding 80 MHz associated with an inhomogeneous dephasing time T2* 270ns. Finally we will focus on recent results demonstrating that the electrical qubit manipulation can be theoretically explained by g-tensor modulation.
Contact : lilian.de-coster@neel.cnrs.fr
Discipline évènement : (Physique)
Entité organisatrice : (Institut Néel / QUEST)
Nature évènement : (Séminaire)
Site de l'évènement : Polygone scientifique
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