This thesis is a study of spin transfer torque in double barrier magnetic tunnel junction for STT-MRAM applications. In these double barrier junctions , spin transfer torque can be tuned by the relative orientation of magnetizations in the two reference layers. Two operating modes can thus be defined : write and read modes. In write mode, the critical current for storage layer switching is reduced compared with a standard junction, which reduces the power consumption. In read mode, information stays stable even if a reasonably large current is applied, which enables fast reading. The obtained results deal with spin transfer torque in double barrier junctions with in-plane and out-of-plane magnetizations , as well as material optimization for double junctions with perpendicular magnetization.

Contact : claire.baraduc@cea.fr