Diamond MOS transistor for power electronics applications

Orateur : Cédric MASANTE

Recent years have seen the emergence of power electronics components using "wide band gap" semiconductors instead of silicon. Among them, SiC and GaN have reached t he level of industrial maturity, but other materials even more promising are studied, including diamond which has exceptional physical properties. The interest for these materials is to deal with the physical limits of silicon : the components using it require ever more complex architectures to increase their performances. In this context, the interest of diamond and the recent advances towards the fabrication of efficient MOS transistor will be presented. A general view of the possibilities offered by this material, but also its limits and challenges to overcome will be exposed.

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