Resumé / Abstract :

Single-electron transistors based on heterostructured nanowires represent a promising and robust building block for a range of applications in fundamental science as well as in sensing. Many of these require a good degree of control on a set of key device parameters such as the tunnel coupling, level spacing and filling, which is not obvious to combine with the adoption of a heterostructure-defined nanodevice. In my talk I will review our recent results on the field-effect control of InAs/InP quantum dots and demonstrate in particular how tunnel rates can be sharply and controllably increased depending on the kind of orbitals involved in the transport process. Experimental results will be compared with simulations of the nanostructure to identify the mechanisms responsible for the tuning.

Contact : equipe-seminaires-nano@fondation-nanosciences.fr