Optical infrared study of BiTeI under high pressure
Mardi 26 mars 2013 11:00
- Duree : 1 heure
Lieu : Salle "Louis Weil" E424 - Institut Néel -bâtiment E, 3ème étage, CNRS Polygone scientifique, 25 rue des martyrs, 38000 Grenoble
Orateur : M. TRAN (Université de Genève)
This talk will cover a brief introduction to infrared spectroscopy followed by an overview of some major features of BiTeI - a semiconductor with giant Rashba sp litting [1] which was predicted to turn into a topological insulator under the application of high pressure [2]. Since the band gap is expected to close and then re-open above a critical pressure, infrared spectroscopy under pressure seems to be a technique of choice to investigate such a transition. I will then give a description of the high pressure technique in infrared used at the Swiss Light Source [3], and present data obtained in reflectivity and transmission. These data show a strong pressure dependence and indicate a change of behavior above 9-10 GPa. This suggests a different ground state for the high pressure phase of this compound.
[1] K. Ishizaka et al., Giant Rashba-type spin splitting in bulk BiTeI, Nature Materials 10, 521 (2011)
[2] B.-J. Yang et al, Emergence of non-centrosymmetric topological insulating phase in BiTeI under pressure, Nature Communications 3, 679 (2012)
[3] Lerch Ph et al., IR beamline at the Swiss Light Source, J. Phys. : Conf. Ser. 359 012003 (2012)
Contact : florence.levy-bertrand@grenoble.cnrs.fr
Discipline évènement : (Physique)
Entité organisatrice : (Institut Néel / MCBT)
Nature évènement : (Séminaire)
Evènement répétitif : (Séminaire MCBT)
Site de l'évènement : Polygone scientifique
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