With the advent of liquid-phase atomic layer deposition (ALD) came the prospect of an almost unlimited availability of precursors and materials that thus far had been inaccessible to gas-phase ALD. Indeed, liquid ALD has been applied successfully to the deposition of conventional gas ALD materials such as TiO2, MgO, and SiO2. However, its full potential has not been exploited so far as only purely organic and inorganic materials have been deposited. Therefore, we propose to expand this approach by depositing metal-organic frameworks (MOFs), which are a new family of materials with a high specific surface area and well-defined pores. As a first approach, the deposition of Cu2O and its further conversion to HKUST-1 is proposed. The microfluidic chip design criteria (e.g., material, size of the canals, pumping system) and the overall compatibility of solvents with the ALD precursors is shown.

Contact : annie.ducher@grenoble-inp.fr