Surface mechanisms controlling the PVT growth of SiC crystals

Orateur : Martin Seiss (SPCS/LMGP)

Silicon carbide (SiC) is a promising semiconductor for power electronics. Although there are SiC wafers up to 150 mm in diameter available on the market, the growth of SiC crystals is still a hot scientific topic. This is due to the fact that the defect density is high, especially in comparison to silicon crystals. In addition, the challenging growth process is continuously improved and further developed. Also at the nanoscale there are many open questions and the aim of this work is to shed some light on these. In this seminar the basic ideas of crystal growth related to the physical vapour transport (PVT) method are presented. Based on these ideas it is shown that important growth parameters can be obtained by ex-situ analysis of growth spirals. Such parameters are, for example, relative supersaturation during growth and the surface diffusion length. The experimental results are linked to simulations in order to establish models for the surface mechanisms.

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