Resistive switching characteristics of complex oxides RRAM devices

Orateur : Carlos ACHA (Departamento de Física, Universidad de Buenos Aires, Argentina)

The resistive random access memories (RRAM) based on the non-volatile change of the resistance of metal-oxide interfaces upon the application of an electric field are nowadays an interesting emerging technology. Their possible technological application as a replacement of the actual non-volatile RAM memory devices is encouraging new basic research in order to obtain a perfect control of all the parameters that influence the effect. In this talk I will present our recent studies performed on YBa2Cu3O7-d (YBCO) - metal interfaces. I will show the non-volatile and polarity dependent resistance switching (RS) effect on these devices as well as different characteristics associated with it : the macroscopic extension of the effect to the bulk YBCO, how the superconducting state is modified, the existence of intrinsic relaxation processes that affect the resistivity after applying the pulses, the temperature sensitivity of the effect, a simple circuit model that describes the IV-characteristics and the appearance of fatigue effects upon applying cyclic electric strains. Most of the effects here presented will be discussed by considering the physics derived from an electric field-induced oxygen ion migration, which controls the electric transport properties of these metal-complex oxide interfaces.

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