Electrical and Dynamical spin injection in Group-IV Materials

Orateur : Masashi SHIRAISHI

Spintronics using group-IV materials, such as graphene, silicon and germanium, attracts tremendous attention in recent years. Here, I talk about our recen t studies on generation of pure spin current and its room-temperature transport. The contents are : -dynamical spin injection and transport of pure spin current in p-Si [1] and graphene [2] -electrical spin injection and transport of pure spin current in n-Si [3-6] -dynamical spin injection in p-Ge [7]. If time permits, I am happy to talk about the other related topics about spin pumping and the inverse spin Hall effect [8,9].

References : [1] E. Shikoh, M. Shiraishi et al., Phys. Rev. Lett. 110, 127201 (2013).
[2] Z. Tang, M. Shiraishi et al., Phys. Rev. B87, 140401(R) (2013).
[3] T. Suzuki, M. Shiraishi et al., Appl. Phys. Express 4, 023003 (2011).
[4] M. Shiraishi et al., Phys. Rev. B83, 241204(R) (2011).
[5] Y. Aoki, M. Shiraishi et al., Phys. Rev. B86, 081201(R) (2012).
[6] M. Kameno, M. Shiraishi et al., Appl. Phys. Lett. 101, 122413 (2012).
[7] M. Koike, M. Shiraishi et al., Appl. Phys. Express 6, 023001 (2013).
[8] Y. Kitamura, M. Shiraishi et al., Sci. Reports, in press.
[9] A. Tsukahara, M. Shiraishi et al., arXiv:1301.3580.

Contact : alain.marty@cea.fr

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